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The Dept. of Electric Engineering and the Dept. of Applied Mathematics of the University of Florence, started a research project whose aim is the study, both from the experimental and theoretical point of view, of IRTD (Interband Resonant Tunneling Diode) devices.
An IRTD is a semiconductor diode based on a quantum resonance effect on the tunneling of electrons through a double potential barrier. After the tunneling, a conduction electron enters a valency band, which makes this device peculiar with respect to the better known infraband RTD. Such IRTD exhibits interesting properties in its I-V (current-voltage) diagram and in the frequency-response behaviour which make it deserving a great deal of attention from the electrical engineering community [4].
The interest of our research in this sector is focused on the developement of mathematical models of an IRTD both in the stationary and non-stationary regime. To this aim we are trying to adapt the techniques already succesfully applied to the study of the better known (infraband) RTD [5], which are mainly based on the Wigner approach.
The research project involves numerical simulations to be compared with experimental data coming from laboratory tests done in Florence.
Next: Quantum-dot
arrays Up: Progetto
Strategico Previous: Wigner equation in bounded